According to reports in the Indian press, AGNIT Semiconductors, a Bengaluru-based GaN startup, has raised $3.5 million in a ...

Ideal Power Inc, US developer of the B-TRAN bidirectional semiconductor power switch, has announced the start of third-party ...

Navitas Semiconductor has announced GaNSlim, a new generation of integrated GaN power ICs designed to simplify and speed the ...

Toshiba Electronics Europe has launched two new eFuse chips. The TCKE903NL and TCKE905ANA products are reusable, thereby ...

Navitas Semiconductor's high-power GaNSafe family is now available in a TOLT (Transistor Outline Leaded Top-side cooling) ...

The US Department of Commerce and Wolfspeed have signed a non-binding preliminary memorandum of terms (PMT) for up to $750 ...

Infineon has announced a partnership with Canada-based AWL-Electricity, combining Infineon's CoolGaN technology with AWL-E's ...

YASA, a UK subsidiary of Mercedes-Benz, is partnering with Formula Student 2025 as part of its ambition to inspire the next ...

Infineon Technologies is introducing the HybridPACK Drive G2 Fusion, establishing a new power module standard for traction ...

A 48V/180A BMS demo is the latest Innoscience design solution to support a high-side same-port BMS application. This design ...

Ultramid polyphthalamide housing enhances robustness, long-term performance and reliability of IGBTs Power electronics firm Semikron Danfoss is using a new polyphthalamide (PPA) material from BASF for ...

UK company says "GaN is the future of power electronics, in terms of energy efficiency, power density and smallest carbon footprint" Cambridge GaN Devices (CGD) has announced that it's exhibiting at ...